Methods for packaging and encapsulating semiconductor device assemblies that include tape substrates

ABSTRACT

Packaging and encapsulation methods include use of a tape substrate with a mold gate that includes an aperture and a support element that extends over at least a portion of the aperture. The tape substrate may be part of a strip. A semiconductor device is secured and electrically connected to the tape substrate. The resulting assembly is placed into a cavity of a mold, and encapsulant is introduced into the cavity through the mold gate of the tape substrate. Once the encapsulant has sufficiently hardened, the package assembly may be removed from the mold, and a sprue of residual encapsulant removed therefrom. If the package assembly is carried by a strip that carries other package assemblies, it may be removed from the strip.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of application Ser. No. 11/186,714,filed Jul. 21, 2005, pending, which is a divisional of application Ser.No. 10/788,990, filed Feb. 27, 2004, now U.S. Pat. No. 7,057,297, issuedJun. 6, 2006. The disclosure of each of the previously referenced U.S.patent applications and patents referenced is hereby incorporated byreference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to flexible substrates and, morespecifically, to tape-based substrates that include copper layers. Inparticular, the present invention relates to tape-based substrates withmold gates that are configured so as to require only a single copperlayer.

2. Background of Related Art

Numerous semiconductor packaging methodologies have found widespreaduse. Among those that have been commonly used is the so-called“board-on-chip” arrangement of a substrate relative to a semiconductordie. As its name implies, a substrate, or “board,” which provides aconnection pattern of input and output elements (e.g., contacts, leads,or other electrodes) is positioned on a semiconductor die. Typically,the substrate is positioned on the bond pad (i.e., input/outputelectrode) bearing surface, or “active” surface, of the semiconductordie.

In order to provide the desired connection pattern, a substratetypically includes a planar dielectric member, electrical contacts onthe die-facing side of the substrate, conductive traces that extendlaterally along the dielectric planar member, and redistributed contactpads, or “terminals,” that are exposed at the opposite surface of thesubstrate. A substrate may also include conductive vias that extendthrough at least a portion of the thickness of the substrate to connectcontacts to corresponding conductive traces.

In addition, to facilitate the formation of a molded protectivestructure, or “package,” around the substrate-semiconductor dieassembly, the substrate may also include a mold gate. A mold gate is afeature on the substrate which is configured to communicate with a moldrunner through which liquid packaging material is introduced into a moldcavity and to direct the liquid packaging material to desired locationsin a desired fashion.

Conventionally, when the substrate of a semiconductor device assembly isa so-called “two-layer flex” or “adhesiveless flex” tape-basedsubstrate, or, more simply, a “tape substrate” 1, it will include aflexible dielectric film 2 (e.g., polyimide) and a layer of conductivetraces 6, which are typically etched from a conductive (e.g., copper)film that was laminated to the polymeric film, that are carried upon asurface of the flexible dielectric film 2, as shown in FIG. 1A. At leastone side, or surface 3, of tape substrate 1 carries conductive traces 6.Packaging, or encapsulating, material is typically introduced oversurfaces of the tape substrate 1 and a semiconductor die thereon fromthe opposite side, or surface 4, of the tape substrate 1. As a result,the mold gate 5 is positioned on the opposite side, or surface 4, of thetape substrate 1 from that which carries the conductive traces 6.

Alternatively, as shown in FIG. 1B, when the substrate of asemiconductor device assembly is a so-called “three-layer flex” or“adhesive flex” tape substrate 1′, it will include a flexible dielectricfilm 2, adhesive material 7 on at least one surface 3 of tape substrate1′, and conductive traces 6 that are secured to surface 3 by way ofadhesive material 7.

As the dielectric film 2 is flexible, the mold gates 5 of tapesubstrates 1, 1′ are typically formed by laminating an additionalmaterial layer to the surface 4 of the tape substrate 1, 1′ which isopposite from the conductive trace-bearing surface 3 of the tapesubstrate 1, 1′. This additional material layer may be used to form themold gate 5 itself, or to support a mold gate 5 which has been formed inthe flexible dielectric film 2. Of course, the requirement that twomaterial layers be laminated onto a flexible dielectric film 2 and,thus, separately patterned undesirably increases the cost of fabricatingthe tape substrate 1, 1′. Moreover, the use of an additional materiallayer to form a mold gate 5 may undesirably increase the thickness ofthe tape substrate 1, 1′, which is counter to the trend towardsemiconductor device packages of ever-decreasing dimensions.

Further, conventional tape-automated bonding (TAB) substrates, whichinclude flexible dielectric films by which conductive traces andcontacts, or terminals, are carried, are typically formed bymechanically punching the flexible dielectric film, laminating oradhesively securing a conductive film to a single surface of theflexible dielectric film, then patterning the conductive film to formconductive traces, contacts, and other conductive features. Becauseconventional tape substrates require that two conductive films bepositioned on opposite surfaces of the flexible dielectric filmsthereof, many TAB substrate manufacturers are unable or unwilling tofabricate tape substrates.

Accordingly, there is a need for a mold gate configuration and mold gatefabrication methods which do not contribute to the thickness of a tapesubstrate of which the mold gate is a part or to the cost of fabricatingthe tape substrate.

SUMMARY OF THE INVENTION

The present invention, in an exemplary embodiment, includes a tapesubstrate with a flexible dielectric layer and a single conductivelayer. A mold gate, which communicates with a surface of the flexibledielectric layer located opposite from that by which the singleconductive layer is carried, is formed in the flexible dielectric layer.A support element of the mold gate, which has been formed from thesingle conductive layer, reinforces the mold gate.

In another embodiment, the present invention includes a mold gate for atape substrate. The mold gate includes an aperture formed within aflexible dielectric film of the tape substrate. The mold gate alsoincludes a support element that overlies at least a portion of theaperture and is formed from a single layer of conductive material, fromwhich conductive traces of the tape substrate are also formed. Moldgates that incorporate teachings of the present invention may be used inconventional semiconductor device mold encapsulation processes.

The present invention also includes, in another embodiment, methods forforming the mold gate in a tape substrate. Such a method includespatterning a flexible dielectric film to include an aperture thatcommunicates with an outer boundary of a tape substrate of which theflexible dielectric film is or is to be a part. A conductive film thatis formed on or laminated to the polyimide film is patterned to formconductive structures, such as conductive traces, as well as to form theremaining support element of the mold gate.

In addition, in a further embodiment, methods for fabricating tapesubstrates are within the scope of the present invention. Such methodsinclude, without being limited to the exemplary order given herein,providing a flexible dielectric film, forming desired features,including a mold gate, in the flexible dielectric layer, laminating aconductive film to a desired surface of the flexible dielectric film,and patterning the conductive film to form a support element of the moldgate, as well as conductive traces.

Systems and methods for assembling and encapsulating semiconductordevice assemblies which include the tape substrates of the presentinvention are also within the scope of the invention.

Other features and advantages of the present invention will becomeapparent to those of ordinary skill in the art through consideration ofthe ensuing description, the accompanying drawings, and the appendedclaims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In the drawings, which depict various features of exemplary embodimentsof the present invention:

FIGS. 1A and 1B are perspective views of conventional tape substrates;

FIG. 2 is a perspective view of a tape substrate which includes a moldgate according to the present invention;

FIG. 3 is a side view of the tape substrate, including the mold gatethereof, shown in FIG. 2;

FIGS. 4-7 are top views of exemplary configurations of mold gatesaccording to the present invention;

FIGS. 8-13 are cross-sectional representations of a flexible dielectricfilm with a conductive layer laminated to a surface thereof depictingexemplary processing thereof to fabricate a tape substrate according tothe present invention;

FIG. 14 is a schematic representation of a flexible dielectric film onwhich a plurality of tape substrates have been fabricated;

FIG. 15 is a side view of an exemplary mold gate that has been formed bythe process shown in FIGS. 8-14;

FIGS. 16-19 are cross-sectional representations of a flexible dielectricfilm which illustrate another example of processing that may be employedto fabricate a tape substrate of the present invention;

FIG. 20 is a side view of a mold gate that has been formed by theprocess shown in FIGS. 16-19 and 11-14;

FIG. 21 depicts a strip including a plurality of tape substrates towhich semiconductor dice have been secured and electrically connected;

FIGS. 22 and 22A show the strip of FIG. 21 with package structuresformed over each tape substrate-semiconductor die assembly; and

FIGS. 23 and 24 schematically depict a process for degating a packagedsemiconductor device that includes a tape substrate according to thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

A tape substrate 10 that incorporates teachings of the present inventionis shown in FIGS. 2 and 3. Tape substrate 10 includes a flexibledielectric film 20, conductive traces 34 that are carried by a surface22 of the flexible dielectric film 20, and a mold gate 40. Mold gate 40includes an aperture 42 formed in the flexible dielectric film 20 and asupport element 44, which is substantially coplanar with, butelectrically isolated from, conductive traces 34.

As shown, flexible dielectric film 20 is a substantially planar memberwhich includes oppositely facing first and second surfaces 22 and 24,respectively. Flexible dielectric film 20 may be formed from anymaterial which is suitable for use in so-called “carrier substrates,”which are configured to carry conductive traces and other conductivestructures, as well as electronic components, such as semiconductordevices, that include input/output elements that communicate with theconductive structures. By way of example only, flexible dielectric film20 may be formed from polyimide (e.g., 50 μm thick polymide), which hasgained wide acceptance in the semiconductor device industry for use as acarrier substrate material.

Conductive traces 34 may be secured to surface 22 nonadhesively (e.g.,by lamination of the material thereof to surface 22), as in anadhesiveless flex substrate, or with a layer of adhesive materialbetween conductive traces 34 and surface 22, as in an adhesive flexsubstrate.

Aperture 42 of mold gate 40 is located adjacent to the location of anouter boundary 12 (e.g., at or outside of outer boundary 12) (FIGS. 14and 21) of tape substrate 10. In addition, aperture 42 opens to bothsurface 22 and surface 24 of flexible dielectric film 20. Supportelement 44 of mold gate 40 partially overlies and is secured to surface22, which is the same surface by which conductive traces 34 are carried.Support element 44 is positioned so as to cover at least a portion ofaperture 42 and forms a base of mold gate 40. The end of aperture 42that opens to surface 24 remains uncovered so as to facilitate theintroduction of liquid packaging material into aperture 42 and, thus,onto surface 24 of flexible dielectric film 20.

FIGS. 4-7 depict exemplary configurations of mold gates according to thepresent invention.

Mold gate 40′ of FIG. 4 has a rectangular configuration. Mold gate 40″,shown in FIG. 5, includes an enlarged opening 45″ and a smaller interior46″, both of which are rectangular in shape. As shown, interior 46″ mayhave a smaller width or a smaller height than opening 45″.

FIG. 6 illustrates a mold gate 40″′ with a Y shape, the opening 45″′thereof comprising a single channel, while the interior 46″′ thereof,which is connected to opening 45″′ at a junction 47″′, includes twochannels 46 a″′ and 46 b′″, between which a diversion dam 48″′, or tap,which prevents packaging material from flowing onto bond wires or otherintermediate conductive elements, is located.

Mold gate 40″″ of FIG. 7 includes an opening 45″″ which is rectangularin shape and which is narrower than the interior 46″″ thereof. The widthof interior 46″″ tapers outwardly from its junction 47″″ with opening45″″, imparting interior 46″″ with a somewhat triangular shape. Ofcourse, other gate configurations are also within the scope of thepresent invention.

Turning now to FIGS. 8-14, an exemplary process for forming tapesubstrate 10 is depicted. The process which is shown in FIGS. 8-14 maybe used to form tape substrate 10 from either a two-layer (adhesivelessflex) tape or a three-layer (adhesive flex) tape.

In FIG. 8, a flexible dielectric film 20 is provided with a conductivefilm 30 (e.g., an 18 μm thick copper film) laminated to a surface 22thereof. Flexible dielectric film 20 may have dimensions that facilitatethe fabrication of a plurality of strips 100 of multiple tape substrates10 thereon (FIG. 14).

As shown in FIG. 9, masks 120, 130, such as photomasks, may be formed onone or both of surface 24 of flexible dielectric film 20 and an exposedsurface 32 of conductive film 30, respectively. Mask 120 may includeapertures 122 which are located and configured so as to expose regionsof flexible dielectric film 20 within which apertures 42 of mold gate 40(FIGS. 2 and 3) are to be formed. Mask 130 may likewise includeapertures 132 which are located and configured to expose regions ofconductive film 30 that are to be removed, such as those areas locatedbetween conductive traces 34 (FIGS. 2 and 3), as well as areas that arelocated laterally adjacent to the position where support element 44 ofmold gate 40 is to be formed.

FIG. 10 depicts patterning of flexible dielectric film 20 through mask120. In particular, an etchant or other chemical or mixture of chemicals(e.g., in a liquid or plasma state) that will remove the material offlexible dielectric film 20 at a faster rate than it will remove thematerial of conductive film 30 is permitted to contact regions offlexible dielectric film 20 that are exposed through apertures 122 ofmask 120. The results are an aperture 42 of a mold gate (FIGS. 2 and 3),as well as other features, such as vias, slots, or other apertures.

FIG. 11 illustrates patterning of conductive film 30 through mask 130 toform conductive traces 34 and support element 44 of mold gate 40 (FIGS.2 and 3). For example, an etchant or mixture of etchants (e.g., wet ordry, isotropic or anisotropic) suitable for removing the material ofconductive film 30 at a faster rate than it removes the material offlexible dielectric film 20 may be permitted to contact regions ofconductive film 30 that are exposed through apertures 132 of mask 130.

Following patterning of flexible dielectric film 20 and conductive film30, masks 120 and 130 may be removed, or “stripped,” as known in theart.

Thereafter, additional conductive features (not shown), may be formed byknown processes. For example, the surfaces or sidewalls 43 of aperture42 may be coated with a thin layer 49 of material (e.g., gold, platinum,palladium, nickel, silver, etc.) that will reduce or prevent adhesion ofa packaging, or encapsulant, material to the material of flexibledielectric film 20. As desired, some or all of the conductive structuresthat are carried by flexible dielectric film 20 may also be plated withdesired materials (e.g., a barrier layer, such as nickel, or a noblelayer, such as gold), as known in the art (e.g., by use of electrolytic,electroless, or immersion plating processes), as shown in FIG. 12.

A solder mask 140 may then be applied or formed, as shown in FIG. 13,over one or both of surfaces 24 and 22 to facilitate the subsequentformation of solder balls or other conductive structures at desiredlocations of each tape substrate 10, i.e., those locations of tapesubstrate 10 that are exposed through apertures 142 of solder mask 140.Solder mask 140 (e.g., an AUS5 solder mask having a thickness of about15 μm to about 35 μm) may be applied to or formed on surface 24, 22 byknown processes.

If it is desired that a diversion dam (e.g., diversion dam 48″′ of FIG.6) be included in a mold gate 40, but the diversion dam was not formedwhile aperture 42 of mold gate 40 was being formed, diversion dam 48″′may be formed during the application or formation of solder mask 140.Diversion dam 48″′ may be formed or applied over the same surface 22, 24of flexible dielectric film 20 as that over which solder mask 140 isformed or applied, or over the opposite surface 24, 22 of flexibledielectric film 20.

Finally, as shown in FIG. 14, flexible dielectric film 20 may besingulated into a plurality of strips 100 of tape substrates 10, asknown in the art. By way of example, known die cutting, or “mechanicalpunching,” techniques may be used to form strips 100 from flexibledielectric film 20. Additionally, various features of strips 100,including, without limitation, transport apertures, or sprocket holes102, thereof, may be formed either concurrently with or separately intime from the singulation of strips 100 from flexible dielectric film20.

An exemplary mold gate 40 that may be formed by the process depicted inFIGS. 8-13 is shown in FIG. 15. As shown, aperture 42 of mold gate 40includes sidewalls 43 which are tapered. Such tapering may be obtainedby use of isotropic etch processes to form aperture 42 in flexibledielectric film 20. Of course, if anisotropic etch processes areemployed, sidewalls 43′ which are oriented substantially perpendicularto a plane of flexible dielectric film 20, such as those depicted inFIG. 20, may be formed.

With reference to FIGS. 16-19, as well as with returned reference toFIGS. 11-14, another exemplary embodiment of a process for fabricating amold gate 40, as well as a tape substrate 10 which includes mold gate40, is illustrated. The process shown in FIGS. 16-19 may be used to formtape substrates 10 from three-layer (adhesive flex) tapes, as conductivefilm 30 may be secured to flexible dielectric film 20 following theformation of an aperture 42 of mold gate 40 (FIGS. 2 and 3)therethrough.

FIG. 16 depicts a flexible dielectric film 20 with both oppositelyfacing surfaces 22 and 24 thereof being exposed.

As shown in FIG. 17, flexible dielectric film 20 may be patterned, suchas by known die cutting, or “mechanical punching,” techniques, to formvias, slots, other apertures, an aperture 42 of a mold gate 40 (FIGS. 2and 3), or other features therein. In the depicted example, each ofthese features, including aperture 42, extends substantially through thethickness of flexible dielectric film 20.

Next, as shown in FIG. 18, a conductive film 30, such as a foil thatcomprises any conductive material that is suitable for use as theconductive traces of a carrier substrate (e.g., copper, aluminum, etc.),is laminated to surface 22 of flexible dielectric film 20. For example,conductive film 30 may be secured to surface 22 with a quantity ofadhesive material 29, which may be applied to either surface 22 or to asurface 31 of conductive film 30 by known processes (e.g., by spraying,use of a roller, etc.).

Once conductive film 30 has been secured to flexible dielectric film 20,a mask 130, such as a photomask, may be applied to or formed over theexposed surface 32 of conductive film 30, as shown in FIG. 19. Regionsof conductive film 30 that are to be removed during patterning thereofare exposed through apertures 132 of mask 130.

Processing then continues as shown in and described with reference toFIGS. 11-14, wherein conductive film 30 is patterned (e.g., by etching)through mask 130 (FIG. 11), conductive features, such as conductivetraces 34 and support element 44 are plated (FIG. 12), solder masks 140are formed over surface 24 or surface 22 (FIG. 13), and strips 100including multiple tape substrates 10 and their corresponding mold gates40 are singulated from flexible dielectric film 20 (FIG. 14).

The result of such processes is the mold gate 40 shown in FIG. 20, whichincludes an aperture 42 with sidewalls 43′ that are orientedsubstantially perpendicular to a plane of flexible dielectric film 20.

As the inventive processes described herein require that only onesurface of a flexible dielectric film 20 have a conductive film 30(FIGS. 8 and 18) laminated thereto, and since the die cutting processesthat are typically employed by TAB substrate manufacturers may be usedto form aperture 42 of mold gate 40, manufacturers of conventional TABsubstrates are equipped to fabricate tape substrates 10 that incorporateteachings of the present invention.

Once strips 100 of tape substrates 10 according to the present inventionhave been formed, semiconductor dice 15 may be secured and electricallyconnected thereto, as known in the art and shown in FIGS. 21 and 22, toform semiconductor device assemblies 18. In addition, conductivestructures 16 (FIG. 22), such as balls, bumps, pillars, or columns ofconductive material (e.g., solder, another metal or metal alloy,conductive or conductor-filled elastomer, a dielectric film withanisotropically, or “z-axis,” conductive elements therein, etc.) may besecured to contact pads 11 (FIG. 22) of tape substrates 10. Suchprocesses may be effected as tape substrates 10 remain a part of a strip100.

Thereafter, as illustrated in FIGS. 22 and 22A, molded packagestructures 62 may be formed around semiconductor device assemblies 18that have been formed on each strip 100. In forming molded packagestructures 62, each semiconductor device assembly 18 may be disposedwithin a cavity of a mold (not shown), with mold gate 40 of eachassembly in alignment with a corresponding mold runner, which is achannel that extends between and communicates with a source of moldmaterial, or “pot,” and the mold cavity within which the assembly islocated. Of course, in order to effect such alignment, the mold may haveto be specifically configured for use with strips 100 that bear tapesubstrates 10 according to the invention. A liquid packaging, orencapsulant, material is then introduced through each mold runner, intoits corresponding mold cavity, through mold gate 40, and over thesurfaces of tape substrate 10 and the semiconductor device that has beenassembled therewith.

FIGS. 23 and 24 depict an exemplary process that may be used to remove asprue 64, which is the resin from the mold runner that remains within amold gate 40, as well as the support element 44 of mold gate 40, oncethe material of sprue 64 has sufficiently cured and prior to trimmingportions of flexible dielectric film 20 that remain outside of a packagestructure 62 that has been molded over a tape substrate 10 (FIGS. 2 and3) and a semiconductor die (not shown) secured and electricallyconnected thereto to form a packaged semiconductor device 60.

In FIG. 23, a strip 100 bearing a plurality of packaged semiconductordevices 60 (only one shown for clarity) is positioned within a degator110. More specifically, strip 100 is positioned beneath an upper degator112, or the upper degator 112 is positioned over strip 100, with sprues64 being received within corresponding slots 114 of upper degator 112.Strip 100 is also positioned over a lower degator 115, or lower degator15 is positioned beneath strip 100, such that an extendable punch 116 islocated beneath each mold gate 40 and sprue 64.

As shown in FIG. 24, once strip 100 has been positioned within degator110, each punch is extended toward and biased against support element 44of its corresponding gate. As pressure is applied to support element 44,support element 44 and the sprue 64 resting thereon are forced throughaperture 42 of mold gate 40 and into slot 114 of upper degator 112.Additionally, sprue 64 is broken free from the remainder of packagestructure 62. Of course, surfaces 43 (FIG. 13) of aperture 42 may belined with a layer 49 (FIG. 13) of adhesion-reducing material, whicheffectively reduces the amount of force that need be applied to supportelement 44 to remove sprue 64 from aperture 42.

Once a first packaged semiconductor device 60 of strip 100 has beendegated in this fashion, strip 100 may be moved (e.g., by indexing thesame) to position another packaged semiconductor device 60 at theappropriate location between upper degator 112 and lower degator 115.

When all of the packaged semiconductor devices 60 on strip 100 have beendegated, the semiconductor device packages 60 may then be separated fromone another, as known in the art.

Although the foregoing description contains many specifics, these shouldnot be construed as limiting the scope of the present invention, butmerely as providing illustrations of some of the presently preferredembodiments. Similarly, other embodiments of the invention may bedevised which do not depart from the spirit or scope of the presentinvention. Moreover, features from different embodiments of theinvention may be employed in combination. The scope of the invention is,therefore, indicated and limited only by the appended claims and theirlegal equivalents, rather than by the foregoing description. Alladditions, deletions, and modifications to the invention, as disclosedherein, which fall within the meaning and scope of the claims are to beembraced thereby.

1. A semiconductor device packaging method, comprising: providing a tapesubstrate including a flexible dielectric film with an aperture of amold gate formed therein and conductive traces and a support element ofthe mold gate on the same surface of the flexible dielectric film;securing a semiconductor die to a surface of the tape substrate to forma semiconductor device assembly; and electrically connecting bond padsof the semiconductor die to corresponding contacts of the tapesubstrate.
 2. The method of claim 1, wherein providing comprisesproviding a tape substrate in which the support element extends at leastpartially over the aperture.
 3. The method of claim 1, furthercomprising: introducing the semiconductor device assembly into a cavityof a mold with the mold gate in alignment with a runner thatcommunicates with the cavity.
 4. The method of claim 3, furthercomprising: introducing a liquid packaging material into the cavitythrough the runner and the mold gate.
 5. The method of claim 4, furthercomprising: permitting the liquid packaging material to substantiallycure or substantially harden.
 6. The method of claim 5, furthercomprising: removing the mold gate and a sprue of substantially cured orsubstantially hardened packaging material within the mold gate.
 7. Themethod of claim 1, wherein providing comprises providing a stripincluding a plurality of tape substrates.
 8. The method of claim 7,further comprising: removing a plurality of assemblies from the strip.9. A semiconductor device encapsulation method, comprising: providing anassembly including: a tape substrate including a flexible dielectricfilm with an aperture of a mold gate formed therein, a support elementextending at least partially across the aperture, conductive traces andthe support element carried by the same surface of the flexibledielectric film; and a semiconductor die on a surface of the tapesubstrate and electrically connected to the tape substrate; andintroducing the assembly into a cavity of a mold, the mold gate and arunner of the mold, which communicates with the cavity, in substantialalignment; and introducing a liquid packaging material into the cavitythrough the runner and the mold gate to form a packaged assembly. 10.The method of claim 9, further comprising: permitting the liquidpackaging material to substantially cure or substantially harden. 11.The method of claim 10, further comprising: removing the mold gate and asprue of substantially cured or substantially hardened packagingmaterial within the mold gate.
 12. The method of claim 11, whereinremoving includes positioning the packaged assembly within a degator.13. The method of claim 11, wherein removing includes applying force tothe support element.
 14. The method of claim 13, wherein applying forcecomprises forcing the support element through the aperture of the moldgate.
 15. The method of claim 14, wherein applying force furthercomprises breaking the sprue from a remainder of a package element andforcing the sprue through the aperture of the mold gate.
 16. The methodof claim 9, wherein providing comprises providing a strip including aplurality of tape substrates.
 17. The method of claim 16, furthercomprising: removing the packaged assembly from the cavity of the mold;then indexing the strip; and introducing another assembly into thecavity of the mold.
 18. The method of claim 16, further comprising:removing packaged assemblies from the strip from one another.